Clik here to view.
Top Ten Trends for NAND Flash
During the Flash Memory Summit in August three panelists were asked to tell what they thought would be the top ten trends for NAND flash in 2012. The panelists were: Troy Winslow, director of product...
View ArticleClik here to view.
New NAND Player: Macronix
Macronix, a company known for its leadership in mask ROMs and low-density NOR flash has just entered the NAND flash market. This adds a new player to a very small pool of competitors: Samsung,...
View ArticleClik here to view.
MOSAID Samples 333GB/s HLNAND
MOSAID announced that the company is sampling a 333GB/s 512Gb HLNAND. According to MOSAID the devices packages: “16 industry standard 32Gb NAND Flash die with two HLNAND interface devices to achieve...
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How Cheap is Flash?
The Memory Guy was a little surprised to see the advertisement in this post’s graphic. It was from an April 8 newspaper ad for Fry’s Electronics. It’s a little early to see NAND selling for this...
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The End of Flash Scaling
Everyone knows that flash memory is about to hit its scaling limit – it’s right around the corner. We’re ready for it because it’s been right around the corner for more than a decade now. It’s so...
View ArticleClik here to view.
SanDisk & Toshiba Move to Next Process Node
SanDisk and Toshiba, in separate announcements, both today disclosed their next-generation process technology. The companies introduced their new “1y” processing node that, according to SanDisk,...
View ArticleClik here to view.
An Alternative Kind of Vertical 3D NAND String
My prior 3D NAND post explained how Toshiba’s BiCS cell works, using a silicon nitride charge trap to substitute for a floating gate. This post will look at an alternative technology used by Samsung...
View ArticleClik here to view.
3D NAND: How do You Access the Control Gates?
One of the thornier problems in making 3D NAND is the job of connecting the peripheral logic (the row decoders) to all of those control gates that are on layers buried somewhere within the bit array....
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What Memory Will Intel’s Purley Platform Use?
There has been quite a lot of interest over the past few days about the apparently-inadvertent disclosure by Intel of its server platform roadmap. Detailed coverage in The Platform showed a couple of...
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Is Micron Being Acquired?
The following is an excerpt of an Objective Analysis Alert sent to our clients 7/13/15. A July 13 Wall Street Journal article disclosed that China’s state-owned Tsinghua Unigroup has bid to buy Micron...
View ArticleClik here to view.
Top Ten Trends for NAND Flash
During the Flash Memory Summit in August three panelists were asked to tell what they thought would be the top ten trends for NAND flash in 2012. The panelists were: Troy Winslow, director of product...
View ArticleClik here to view.
New NAND Player: Macronix
Macronix, a company known for its leadership in mask ROMs and low-density NOR flash has just entered the NAND flash market. This adds a new player to a very small pool of competitors: Samsung,...
View ArticleClik here to view.
MOSAID Samples 333GB/s HLNAND
MOSAID announced that the company is sampling a 333GB/s 512Gb HLNAND. According to MOSAID the devices packages: “16 industry standard 32Gb NAND Flash die with two HLNAND interface devices to achieve...
View ArticleClik here to view.
How Cheap is Flash?
The Memory Guy was a little surprised to see the advertisement in this post’s graphic. It was from an April 8 newspaper ad for Fry’s Electronics. It’s a little early to see NAND selling for this...
View ArticleClik here to view.
The End of Flash Scaling
Everyone knows that flash memory is about to hit its scaling limit – it’s right around the corner. We’re ready for it because it’s been right around the corner for more than a decade now. It’s so...
View ArticleClik here to view.
SanDisk & Toshiba Move to Next Process Node
SanDisk and Toshiba, in separate announcements, both today disclosed their next-generation process technology. The companies introduced their new “1y” processing node that, according to SanDisk,...
View ArticleClik here to view.
An Alternative Kind of Vertical 3D NAND String
My prior 3D NAND post explained how Toshiba’s BiCS cell works, using a silicon nitride charge trap to substitute for a floating gate. This post will look at an alternative technology used by Samsung...
View ArticleClik here to view.
3D NAND: How do You Access the Control Gates?
One of the thornier problems in making 3D NAND is the job of connecting the peripheral logic (the row decoders) to all of those control gates that are on layers buried somewhere within the bit array....
View ArticleClik here to view.
What Memory Will Intel’s Purley Platform Use?
There has been quite a lot of interest over the past few days about the apparently-inadvertent disclosure by Intel of its server platform roadmap. Detailed coverage in The Platform showed a couple of...
View ArticleClik here to view.
Is Micron Being Acquired?
The following is an excerpt of an Objective Analysis Alert sent to our clients 7/13/15. A July 13 Wall Street Journal article disclosed that China’s state-owned Tsinghua Unigroup has bid to buy Micron...
View Article
